Title of article :
Electronic transport properties of quasicrystalline thin films
Author/Authors :
Haberkern، نويسنده , , R and Khedhri، نويسنده , , K and Madel، نويسنده , , C and Hنussler، نويسنده , , P، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
475
To page :
480
Abstract :
We focus on the question if electronic transport properties of quasicrystals can be understood by a Hume–Rothery like interaction between the atomic structure and the electronic system. Therefore, we report about composition and temperature dependent investigations of the electrical conductivity, the thermopower and the Hall effect of quasicrystalline films, mainly for i-Al–Pd–Re and i-Al–Cu–Fe and compare it to the amorphous counterparts which are known to be electronically stabilized and are much simpler to understand due to their isotropy. ilms provide the possibility to measure the thermopower and the Hall effect at elevated temperatures up to 1000 K. Both indicate a strongly increasing charge-carrier density as a function of temperature.
Keywords :
Quasicrystalline films , Electronic transport , Amorphous films , Al–Cu–Fe , Al–Pd–Re
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2000
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2136393
Link To Document :
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