Longitudinal and lateral distributions of medium energy heavy ions in some semiconductor films

The depth distributions of Bi+ and Fe+ ions implanted into SiN1.375H0.603, α-Si, Si3N4 and SiO2 films at different angles were measured by Rutherford backscattering technique. The results show that: (1) the experimental mean projected range Rp is in agreement with the calculated value by TRIMʹ98 within 9% for SiN1.375H0.603, Si3N4 α-Si cases; (2) the experimental range straggling ΔRp is larger than the calculated value by TRIMʹ98, the reason is not known; and (3) the depth distributions of implanted ions at different angles in all cases exhibit nearly Gaussian behaviour; the agreement of the extracted lateral spread with the calculated value is best for the case of Bi+ ions implanted into SiO2.