Title of article
Development of a vertical gradient freeze process for low EPD GaAs substrates
Author/Authors
Bünger، نويسنده , , Th. and Behr، نويسنده , , Timothy D. and Eichler West، نويسنده , , St. and Flade، نويسنده , , T. and Fliegel، نويسنده , , W. and Jurisch، نويسنده , , M. and Kleinwechter، نويسنده , , A. and Kretzer، نويسنده , , U. and Steinegger، نويسنده , , Th. and Weinert، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
5
To page
9
Abstract
The main characteristics of low EPD 4 in semi-insulating and Si-doped conductive GaAs single crystals grown by a proprietary low thermal gradient vertical gradient freeze (VGF) technique on an industrial scale are presented.
Keywords
Semi-insulating GaAs , Si-doped GaAs , GaAs crystal growth , VGF method , Low EPD
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136440
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