Title of article
Integrated analytical equipment for control of film growth in MBE technology
Author/Authors
Mikhailov، نويسنده , , N.N. and Rykhlitski، نويسنده , , S.V. and Spesivtsev، نويسنده , , E.V. and Dulin، نويسنده , , S.A. and Nazarov، نويسنده , , N.I. and Sidorov، نويسنده , , Yu.G. and Dvoretsky، نويسنده , , S.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
41
To page
45
Abstract
The integrated analytical equipment has been developed for in-situ measuring growth rate and film composition by the ultra-fast ellipsometer, surface temperature by the polarization-type pyrometer and for precise control over the epitaxial processes by automatic control system. This complex was used to control the mercury cadmium telluride heteroepitaxial structure growth on GaAs substrate with various composition distributions throughout the thickness. The maintenance accuracy of Hg1−xCdxTe composition during growth was up to ΔXCdTe=±0.0005. The maintenance accuracy of substrate temperature was found to be up to ±1°C.
Keywords
Film growth , MBE technology , Integrated analytical equipment
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136467
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