Author/Authors :
Mikhailov، نويسنده , , N.N. and Rykhlitski، نويسنده , , S.V. and Spesivtsev، نويسنده , , E.V. and Dulin، نويسنده , , S.A. and Nazarov، نويسنده , , N.I. and Sidorov، نويسنده , , Yu.G. and Dvoretsky، نويسنده , , S.A.، نويسنده ,
Abstract :
The integrated analytical equipment has been developed for in-situ measuring growth rate and film composition by the ultra-fast ellipsometer, surface temperature by the polarization-type pyrometer and for precise control over the epitaxial processes by automatic control system. This complex was used to control the mercury cadmium telluride heteroepitaxial structure growth on GaAs substrate with various composition distributions throughout the thickness. The maintenance accuracy of Hg1−xCdxTe composition during growth was up to ΔXCdTe=±0.0005. The maintenance accuracy of substrate temperature was found to be up to ±1°C.
