Title of article
A model for diffusion of beryllium in InGaAs/InP heterostructures
Author/Authors
NABILA IHADDADENE، نويسنده , , M. and Koumetz، نويسنده , , S. and Latry، نويسنده , , O. and Ketata، نويسنده , , K. and Ketata، نويسنده , , M. and Dubois، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
73
To page
76
Abstract
This study reports on Be diffusion from a Be-doped (3×1019 cm−3) In0.53Ga0.47As layer sandwiched between undoped InP layers grown by gas source molecular beam epitaxy. To explain the obtained experimental depth profiles, a kick-out model of substitutional interstitial diffusion mechanism, involving neutral Be interstitials for the InGaAs epilayer and singly positively charged Be interstitials for the InP epilayers, is proposed. Using the boundary conditions at the heterojunctions and taking into account the built-in electric field, Fermi level and bulk self-interstitial generation/annihilation effects, we obtained a good agreement between the simulated and experimental data.
Keywords
diffusion , Gas source molecular beam epitaxy , InGaAs , Beryllium
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136491
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