Title of article
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Author/Authors
Cirlin، نويسنده , , G.E. and Polyakov، نويسنده , , N.K. and Petrov، نويسنده , , V.N. and Egorov، نويسنده , , V.A. and Denisov، نويسنده , , D.V. and Volovik، نويسنده , , B.V. and Ustinov، نويسنده , , V.M. and Alferov، نويسنده , , Zh.I. and Ledentsov، نويسنده , , N.N. and Heitz، نويسنده , , R. and Bimberg، نويسنده , , D. and Zakharov، نويسنده , , N.D. and Werner، نويسنده , , P. and Gِsele، نويسنده , , U.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
108
To page
111
Abstract
MBE growth and properties of InAs nanoscale islands formed on silicon are reported. Islands capped with Si emit a photoluminescence band in the 1.3 μm region. Upon annealing at increased substrate temperature, extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of ∼6 nm, exhibiting two kinds of ordering, are observed. The ordering of InAs molecules occurs, respectively, in (101) and 101̄ planes inclined to (110) and 11̄0 planes parallel to the [001] growth direction.
Keywords
Silicon , Photoluminescence , Quantum dots , Transmission electron microscopy , InAs , Molecular Beam Epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136512
Link To Document