Title of article :
Scanning electron microscopy study of twins in ZnSe single crystals grown by solid-phase recrystallization
Author/Authors :
Urbieta، نويسنده , , A. and Fernلndez، نويسنده , , P. and Piqueras، نويسنده , , J. and Muٌoz، نويسنده , , V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
130
To page :
133
Abstract :
ZnSe single crystals were grown from n-type microcrystalline boules by a solid phase recrystallization (SPR) method. During SPR, twinned regions appear with different electronic recombination properties. The recrystallizations were performed under different atmospheres, Ar or Se, and pressures to investigate the influence of growth conditions on these structural features. Recombination properties were studied by means of cathodoluminescence (CL) and remote-electron beam induced current (REBIC). Wavelength dispersive X-ray (WDX) mappings were also performed to analyze possible differences in stoichiometry related to the presence of extended defects.
Keywords :
II–VI semiconductors , cathodoluminescence , Defect levels
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2136525
Link To Document :
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