Title of article
Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance–voltage technique
Author/Authors
Hasegawa، نويسنده , , Hideki and Takahashi، نويسنده , , Hiroshi Katayama-Yoshida، نويسنده , , Toshiyuki and Sakai، نويسنده , , Takamasa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
147
To page
151
Abstract
A ultrahigh vacuum contactless capacitance–voltage technique is described as a powerful in situ surface characterization of growth and processing steps for III–V device fabrication. The technique was applied to characterization of MBE-grown surfaces and to optimization of the silicon interface control layer-based surface passivation.
Keywords
UHV contactless C–V in situ characterization , Compound Semiconductor , Surface passivation , ECR , Nitridation , Silicon interface control layer
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136534
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