Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires

We investigated the photoluminescence of InGaP/GaAs/InGaP heterostructures with the aim to prepare quantum wires by the epitaxial overgrowth of V-groove patterned substrates. Planar and V-groove patterned GaAs semiinsulating substrates were used for epitaxial growth in a low-pressure MOVPE equipment with a horizontal reactor. Low temperature photoluminescence measurements show that the composition of the InGaP ternary compound prepared on the patterned substrates is shifted to a higher InP mole fraction compared with the planar ones. On the other hand, the measurement on the V-grooved samples showed that the PL peak is shifted to higher energies (i.e. to the higher amount of Ga), which indicates a change in the ternary composition of about 5%. Crystalline quality of the overgrown structures was studied by transmission electron microscopy. Both, photoluminescence and photoluminescence polarization measurement show that quantum wires can be successfully prepared in the InGaP/GaAs/InGaP system.