The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides

High-brightness nitride-based LEDs have been grown on SiC substrates, which offers many advantages in the production both from epitaxial, chip and device processing point of view. Optimized InGaN/GaN/GaAlN MQW structures and improved chip and package designs were developed, resulting in optical outputs that exceed 7 mW at 20 mA in a 5 mm axial lamp. InGaN oxide stripe lasers (450 μm×3.5 μm) with an emission wavelength around 420 nm were fabricated showing threshold currents of 330 mA and turn-on voltages of about 21V operated under pulse current injections at room temperature. Strained layer GaInAsSb/AlGaAsSb quantum well lasers operating near room temperature with emission wavelengths up to 2.26 μm and a cw output of 240 mW were demonstrated. Short-period InAs/GaInSb superlattices with different InAs layer widths have been used for the fabrication of photodiodes, showing responsivity spectra with cut-off wavelengths of 4.5 and 10 μm, respectively.