Title of article :
GaAs planar doped barrier diodes
Author/Authors :
Szentpلli، نويسنده , , B. and Van Tuyen، نويسنده , , Vo and Constantinidis، نويسنده , , G. and Lagadas، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
257
To page :
261
Abstract :
The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting mechanisms. The limits of the I–V characteristics are described. The design of the device is shown on an example. The measured and calculated characteristics agree well.
Keywords :
PDBD , thermionic emission , Zero-bias detector , MBE
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2136617
Link To Document :
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