Title of article
Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films
Author/Authors
Aldabergenova، نويسنده , , S.B and Albrecht، نويسنده , , M. and Strunk، نويسنده , , H.P. and Viner، نويسنده , , J. and Taylor، نويسنده , , P.C and Andreev، نويسنده , , A.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
29
To page
31
Abstract
ErO6 complexes, where every Er3+ ion is surrounded by six oxygen atoms forming an octahedron with C3v point symmetry are found to explain the strong Stark splitting of the characteristic Er3+ emission observed in the 1460–1610 nm range. An a-Si:H matrix serves as an ideal semiconductor host to permit co-doped O atoms to form an optimal ligand field around Er3+ ions.
Keywords
Optimal ligand field , Stark splitting , a-Si:H matrix , microstructure , Er3+ emission
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136760
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