Title of article
Stimulated emission in erbium-doped silicon structures under optical pumping
Author/Authors
Bresler، نويسنده , , M.S. and Gusev، نويسنده , , O.B. and Terukov، نويسنده , , E.I. and Yassievich، نويسنده , , I.N. and Zakharchenya، نويسنده , , B.P. and Emelʹyanov، نويسنده , , V.I. and Kamenev، نويسنده , , B.V. and Kashkarov، نويسنده , , P.K. and Konstantinova، نويسنده , , E.A. and Timoshenko، نويسنده , , V.Yu.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
52
To page
55
Abstract
Stimulated emission of erbium ions inserted in the matrix of amorphous hydrogenated silicon was first observed under optical pumping. A ʹhomogeneousʹ model of lasing in such structure was developed taking into account the saturation of the active medium. It is demonstrated that the generation regime is possible only in the case when the concentration of optically active erbium ions in the medium exceeds some threshold value determined by losses in the resonator.
Keywords
Erbium-doped silicon , Optical pumping , stimulated emission
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136779
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