Title of article :
Stimulated emission in erbium-doped silicon structures under optical pumping
Author/Authors :
Bresler، نويسنده , , M.S. and Gusev، نويسنده , , O.B. and Terukov، نويسنده , , E.I. and Yassievich، نويسنده , , I.N. and Zakharchenya، نويسنده , , B.P. and Emelʹyanov، نويسنده , , V.I. and Kamenev، نويسنده , , B.V. and Kashkarov، نويسنده , , P.K. and Konstantinova، نويسنده , , E.A. and Timoshenko، نويسنده , , V.Yu.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
52
To page :
55
Abstract :
Stimulated emission of erbium ions inserted in the matrix of amorphous hydrogenated silicon was first observed under optical pumping. A ʹhomogeneousʹ model of lasing in such structure was developed taking into account the saturation of the active medium. It is demonstrated that the generation regime is possible only in the case when the concentration of optically active erbium ions in the medium exceeds some threshold value determined by losses in the resonator.
Keywords :
Erbium-doped silicon , Optical pumping , stimulated emission
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2136779
Link To Document :
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