Author/Authors :
Trager-Cowan، نويسنده , , C and Manson-Smith، نويسنده , , S.K and Cowan، نويسنده , , D.A and Sweeney، نويسنده , , F and McColl، نويسنده , , D and Mohammed، نويسنده , , A and Timm، نويسنده , , R and Middleton، نويسنده , , P.G and OʹDonnell، نويسنده , , K.P. and Zubia، نويسنده , , D. and Hersee، نويسنده , , S.D، نويسنده ,
Abstract :
In this paper, we describe the technique of electron backscattered diffraction (EBSD) and illustrate its use in the characterisation of nitride thin films by describing our results from a silicon-doped 3 μm thick GaN epilayer grown on a sapphire substrate misoriented by 10° towards the m-plane (10-10). We show that the EBSD technique may be used to reveal the relative orientation of an epilayer with respect to its substrate (a 90° rotation between the GaN epilayer and sapphire substrate is observed) and to determine its tilt (the GaN epilayer was found to be tilted by 12±3° towards [10-10]GaN).
Keywords :
Electron Backscattered Diffraction (EBSD) , diffraction , Kikuchi , nitrides , GaN
