High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN — based structures

The application of the pressure grown GaN single crystalline substrates allows to grow near dislocation free layer structures by both MOCVD and MBE. This is demonstrated by X-ray, AFM, TEM and defect selective etching results showing high structural perfection of both GaN substrates and epitaxial structures. The properties of these near dislocation free epitaxial layers and structures indicate that dislocations are the important factor limiting radiative efficiency of nitrides, especially at high excitations.