Author/Authors :
E. Martinez-Guerrero، نويسنده , , E and Daudin، نويسنده , , B and Feuillet، نويسنده , , G and Mariette، نويسنده , , Frédéric Genuist، نويسنده , , Y and Fanget، نويسنده , , S and Philippe، نويسنده , , A and Dubois، نويسنده , , C and Bru-Chevallier، نويسنده , , C and Guillot، نويسنده , , Y and Aboughe-nze، نويسنده , , P and Chassagne، نويسنده , , T and Monteil، نويسنده , , Y and Gamez-Cuatzin، نويسنده , , H and Tardy، نويسنده , , J، نويسنده ,
Abstract :
n-type doping with Si and p-type doping with Mg are reported for cubic GaN grown by molecular beam epitaxy (MBE) on cubic SiC(001). Mg incorporation as high as 1×1019 cm−3 has been reached at low growth temperatures. However, no correlation is found between the hole concentration and Mg concentration, probably due to deep levels induced by the stacking faults and the residual doping present in the layer, as revealed by the deep optical transition which dominates the photoluminescence (PL) spectra. In contrast, n-type doped samples with Si are much better controlled, with a maximum value of 5×1019 cm−3 for the free electron concentration, and with a clear donor signature in their PL spectra.
Keywords :
Cubic GaN , P-type doping , SiC (001) , n-Type doping
