• Title of article

    Investigation of beryllium implanted P-type GaN

  • Author/Authors

    Yu، نويسنده , , Chang-Chin and Chu، نويسنده , , C.F. and Tsai، نويسنده , , J.Y and Wang، نويسنده , , S.C، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    3
  • From page
    82
  • To page
    84
  • Abstract
    We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of ∼1013 and 1014 cm−2 at room temperature. Surface morphology and photoluminescence measurements are presented.
  • Keywords
    GaN , Photoluminescence , Implant , Beryllium
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2001
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2137018

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2137018