Title of article
Electronic and vibrational properties of Mg- and O-related complexes in GaN
Author/Authors
Fall، نويسنده , , C.J. and Jones، نويسنده , , R and Briddon، نويسنده , , P.R and ضberg، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
88
To page
90
Abstract
We investigate from first principles the energetic and vibrational properties of various candidate structures for the 3125 cm−1 local vibrational mode in GaN, known to be related to hydrogen passivated magnesium atoms. The orientation of the electric dipole of this mode has recently been measured with respect to the wurtzite c-axis, giving a result seemingly inconsistent with current atomic models for this defect. We study the possibility that complexes of magnesium, native impurities and hydrogen could give rise to the experimental observations. Furthermore, we consider a possible candidate giving rise to a 0.88-eV line in a variety of electron-irradiated GaN samples. We find evidence that a deep donor level including substitutional oxygen must result from a complex impurity.
Keywords
Gallium nitride , Magnesium , Hydrogen , Ab initio theory , Oxygen
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137025
Link To Document