Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation

We have used deep level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN grown, using the epitaxial lateral overgrowth technique during high-energy electron irradiation from a 90Sr radionuclide source. The results indicate that, apart from the major defect with an energy level at 0.20 eV below the conduction band (supposed to be related to the VN), at least four other defects with energy levels centered about 0.90±0.15 eV, are introduced. From modeling, ignoring temperature dependent capture cross-section effects we have determined their activation energies, and temperature independent capture cross sections, commonly known as the DLTS signature.