Title of article
Annealing behavior of Pd/GaN (0001) microstructure
Author/Authors
Kim، نويسنده , , C.C. and Je، نويسنده , , J.H. and Kim، نويسنده , , D.W. and Baik، نويسنده , , H.K. and Lee، نويسنده , , S.M. and Ruterana، نويسنده , , Pierre، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
105
To page
107
Abstract
We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.
Keywords
PD , Gallide , microstructure , Interfacial structure , epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137043
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