Title of article :
Microstructure of GaN nucleation layer during initial stage MOCVD growth
Author/Authors :
Kim، نويسنده , , C.C. and Je، نويسنده , , J.H. and Yi، نويسنده , , M.S. and Noh، نويسنده , , D.Y. and Degave، نويسنده , , F. and Ruterana، نويسنده , , Pierre، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure.
Keywords :
GaN , Nucleation Layer , tensile strain , Interface structure , microstructure
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
