Title of article :
The preparation and characterisation of gallium nitride using the Hi-Prexx facility
Author/Authors :
Russell، نويسنده , , D. and Bayliss، نويسنده , , S.C. and Sapelkin، نويسنده , , A.V. and Clark، نويسنده , , S.M. and Dent، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
3
From page :
120
To page :
122
Abstract :
Several previously reported methods have been investigated for the production of bulk, high quality, gallium nitride powder. Two principal attempts are reported, using solid state metathesis reactions and high temperature flowing ammonia techniques. Using the latter method high purity, single-phase bulk, wurtzite gallium nitride powder was produced using a very simple method. Using the on-line Hi-Prexx facility the powders have been examined up to pressures of 41 GPa using EXAFS, X-ray diffraction and photoluminescence along with further SEM analysis. X-ray diffraction showed the powder to be highly pure P63mc (186) wurtzite GaN. PL studies found that there is an approximate shift with pressure of 30–37 meV/GPa and with Ga k-edge EXAFS data display a clear pressure dependency of the local structure of nearest neighbour atoms.
Keywords :
Pressure , Photoluminescence , EXAFS , diffraction , GaN
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137061
Link To Document :
بازگشت