Author/Authors :
Borsella، نويسنده , , Abderrahim and Dal Toè، نويسنده , , S and Mattei، نويسنده , , G and Maurizio، نويسنده , , C and Mazzoldi، نويسنده , , P and Saber، نويسنده , , A and Battaglin، نويسنده , , G.C and Cattaruzza، نويسنده , , E and Gonella، نويسنده , , F and Quaranta، نويسنده , , dAcapito، F. نويسنده , , F، نويسنده ,
Abstract :
GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions, either crystalline or amorphous dielectrics, followed by annealing of the samples in flowing NH3 gas at 900°C. A blue shift of the near band-edge photoluminescence (quantum confinement effect) is observed for GaN nanocrystals with a size of ∼2–3 nm, formed in the α-Al2O3 substrate.
