Title of article :
Nonlinear spectroscopy of homoepitaxial GaN
Author/Authors :
Schweitzer، نويسنده , , C and Frِhlich، نويسنده , , D and Reimann، نويسنده , , K and Prystawko، نويسنده , , P and Leszczynski، نويسنده , , M and Suski، نويسنده , , T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
3
From page :
156
To page :
158
Abstract :
Exciton polaritons from the three uppermost valence bands and the lowest conduction band in homoepitaxial GaN are studied by nonlinear spectroscopy. Second and third harmonic generation and three-photon difference-frequency generation are used to excite resonances on different polariton branches. The resonances show a characteristic polarization dependence, which is consistent with the symmetry assignment of the valence bands.
Keywords :
Nonlinear optics , excitons , Electronic band-structure , Polaritons , Gallium nitride
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137102
Link To Document :
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