Title of article
Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
Author/Authors
Schenk، نويسنده , , H.P.D. and Leroux، نويسنده , , M. and de Mierry، نويسنده , , P. and Laügt، نويسنده , , M. and Omnès، نويسنده , , F. and Gibart، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
163
To page
166
Abstract
Silicon-doped InxGa1−xN films (0.01≲x≲0.03) have been grown by metalorganic vapour phase epitaxy on sapphire substrates. The evolution of the photoluminescence (PL) lineshape has been studied as a function of temperature and electron concentration n. PL linewidths are related to n by a power law. High-energy slopes of PL spectra indicate quasi-thermal equilibrium at room temperature justifying the use of the van Roosbroeck–Shockley (vRS) relation to link both absorption and PL. Absorption characteristics as implied by this relation are compared with experimental absorption spectra.
Keywords
n-InGaN:Si , LP-MOVPE , PDS , van Roosbroeck–Shockley , Pl , Stokes’ shift
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137110
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