Title of article
Growth and characterisation of self-assembled cubic GaN quantum dots
Author/Authors
Adelmann، نويسنده , , E. Martinez-Guerrero، نويسنده , , E and Chabuel، نويسنده , , F and Simon، نويسنده , , J and Bataillou، نويسنده , , B and Mula، نويسنده , , G and Dang، نويسنده , , Le Si and Pelekanos، نويسنده , , N.T and Daudin، نويسنده , , B and Feuillet، نويسنده , , G and Mariette، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
212
To page
214
Abstract
Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AlN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm. The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescence with no thermal quenching up to room temperature.
Keywords
Stranski–Krastanow growth , Cubic GaN , Self-assembled quantum dots
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137173
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