Title of article :
Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg
Author/Authors :
Kaminska، نويسنده , , E and Piotrowska، نويسنده , , A and Barcz، نويسنده , , A and Bour، نويسنده , , D and Zielinski، نويسنده , , M and Jasinski، نويسنده , , J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
We report on the formation of low resistivity ohmic contacts to p-GaN, rc<10−4 Ω cm2, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen.
Keywords :
ZrB2 , Hydrogen , p-GaN , ZrN , Ohmic contact
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
