{1-x SrBi2Ta2O9-x Bi3TiTaO9} Materials: structural behavior and ferroelectric response

Ferroelectric memory was observed in {1-x SrBi2Ta2O9-x Bi3TiTaO9} material for the composition x=0.3. Thus, there is interest in the investigation of detailed properties of this material system. We report on the structural and electrical properties of this material system using X-ray diffraction, Raman spectroscopy, impedance spectroscopy, and ferroelectric measurements. These studies suggest that high quality powder and thin films could be prepared for all compositions by a chemical solution route at the temperature ranging from 650 to 750°C. Ferroelectric response was also observed in thin film (for x=0.5) and pellet (for x=0.0) samples.