Author/Authors :
Fert، نويسنده , , A. and Barthélemy، نويسنده , , A. and Youssef، نويسنده , , J.Ben and Contour، نويسنده , , J.-P. and Cros، نويسنده , , V. and De Teresa، نويسنده , , J.M. and Hamzic، نويسنده , , A. and George، نويسنده , , J.M. and Faini، نويسنده , , G. and Grollier، نويسنده , , J. and Jaffrès، نويسنده , , H. and Le Gall، نويسنده , , H. and Montaigne، نويسنده , , F. and Pailloux، نويسنده , , F. and Petroff، نويسنده , , F.، نويسنده ,
Abstract :
We review recent results obtained at Orsay on two topics in the field of spin electronics: (i) Spin polarized tunneling in magnetic tunnel junctions combining electrodes of ferromagnetic transition metal and half-metallic oxide: we will describe the influence of the nature of the barrier on the sign of the spin polarization of electrons tunneling from the transition metal and we also discuss the temperature dependence of the TMR obtained with half metallic oxides. (ii) Magnetization reversal by spin injection: we will present and interpret experimental results obtained with pillar-shaped Co/Cu/Co trilayers.
