Author/Authors :
Katsumoto، نويسنده , , S and Hayashi، نويسنده , , T and Hashimoto، نويسنده , , Y and Iye، نويسنده , , Y and Ishiwata، نويسنده , , Y and Watanabe، نويسنده , , M and Eguchi، نويسنده , , R and Takeuchi، نويسنده , , T and Harada، نويسنده , , Y and Shin، نويسنده , , S and Hirakawa، نويسنده , , K، نويسنده ,
Abstract :
We report experiments on the magnetism and the transport in III–V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal–insulator critical point was studied in detail by using the low-temperature annealing method.
