Electrical characteristics of low energy tellurium implanted indium antimonide

The p-type indium antimonide (InSb) samples grown by the vertical directional solidification (VDS) technique were implanted with 2×1013, 1.8×1014 and 1.5×1015 30 keV Te+ cm−2 at room temperature. The current–voltage (I–V) measurements on as-implanted and vacuum annealed samples were carried out at room temperature and at low temperatures. The as-implanted samples show resistor like behaviour which changes to p-n junction characteristics on annealing. The annealing temperature necessary for the formation of good a p–n junction depends on the implantation dose. The I–V measurements at low temperatures show improvements in the p–n junction characteristics.