Author/Authors :
Wang، نويسنده , , M and Huang، نويسنده , , A.P and Wang، نويسنده , , B and Yan، نويسنده , , H and Yao، نويسنده , , Z.Y and Morimoto، نويسنده , , A and Shimizu، نويسنده , , T، نويسنده ,
Abstract :
SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.
