Title of article
Bias effects on structure of sputtered SiC films
Author/Authors
Wang، نويسنده , , M and Huang، نويسنده , , A.P and Wang، نويسنده , , B and Yan، نويسنده , , H and Yao، نويسنده , , Z.Y and Morimoto، نويسنده , , A and Shimizu، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
25
To page
27
Abstract
SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.
Keywords
SiC , sputtering , Bias-assisted
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137513
Link To Document