Optoelectronic properties of InAs1−xPx semiconducting alloys

The investigation of optoelectronic properties of zincblende, InAs1−xPx, semiconducting alloys by pseudopotential calculations is reported in this paper. Our scheme employs the local empirical pseudopotential method, and includes the disorder effect into the virtual crystal approximation by introducing an effective disorder potential. Various quantities such as band lineup, band-gap energies, valence bandwidth, refractive index and optical dielectric constant for the alloy of interest are calculated. Our results show a reasonable agreement with the available experimental data. Attention has also been paid to the compositional dependence of these quantities studied.