Temperature effect on electroluminescence spectra of silicon p–n junctions under avalanche breakdown condition

The temperature effect on electroluminescence spectra of silicon p–n junctions under avalanche breakdown condition is investigated. Two different cases are considered in the framework of the indirect interband recombination model including the self absorption effect. The first is when the electric field remains constant when the temperature varies, and the second is when, for each temperature, the electric field is modified following the variation of the avalanche breakdown voltage versus temperature. It is shown that, with a constant electric field, the electroluminescence intensity increases as observed in experimental measurements, whereas a small and negligible increase of the electroluminescence intensity is obtained with a modified field.