Title of article
Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
Author/Authors
Vetter، نويسنده , , William M and Dudley، نويسنده , , Michael، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
173
To page
177
Abstract
Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈112̄0〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈101̄0〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b=1/3〈112̄0〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.
Keywords
Silicon carbide crystals , Dislocations , X-ray topographs
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137823
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