• Title of article

    Dielectric properties of La-modified antiferroelectric PbZrO3 thin films

  • Author/Authors

    Bharadwaja، نويسنده , , S.S.N and Saha، نويسنده , , S and Bhattacharyya، نويسنده , , S and Krupanidhi، نويسنده , , S.B، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    22
  • To page
    25
  • Abstract
    Lead zirconate is a room temperature antiferroelectric material, which exhibits double polarization hysteresis characteristic in the presence of external field. A transformation from antiferroelectric to paraelectric behavior through a ferroelectric phase has been exhibited upon addition of La-to pure lead zirconate thin films, which were confirmed from dielectric, hysteresis and pyroelectric and micro Raman analyses. Thin films of pure and La-modified lead zirconate were processed using A-site vacancy formula Pb(l−1.5x)LaXZrO3 by pulsed excimer laser ablation technique. Pyroelectric coefficient increased gradually from 55 to 190 μC cm−2 K−1 with the addition of 0 to 9 mole% of La to pure lead zirconate. The transition temperature has been reduced to room temperature (∼34 °C) with addition of a 9 mole% of La-to lead zirconate. Presence of antiferroelectricity in pure lead zirconate thin films is due to antiparallel shifts of Pb-ions in (110) direction and reduction of transition temperature is attributed to creation of A-site vacancies would have caused enhancing of ferro-and paraelectric behavior with La-addition.
  • Keywords
    Antiferroelectric lead zirconate , Micro Raman spectra and pyroelectric measurements , Thin films
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2002
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2137859