Title of article :
Dielectric properties of La-modified antiferroelectric PbZrO3 thin films
Author/Authors :
Bharadwaja، نويسنده , , S.S.N and Saha، نويسنده , , S and Bhattacharyya، نويسنده , , S and Krupanidhi، نويسنده , , S.B، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
4
From page :
22
To page :
25
Abstract :
Lead zirconate is a room temperature antiferroelectric material, which exhibits double polarization hysteresis characteristic in the presence of external field. A transformation from antiferroelectric to paraelectric behavior through a ferroelectric phase has been exhibited upon addition of La-to pure lead zirconate thin films, which were confirmed from dielectric, hysteresis and pyroelectric and micro Raman analyses. Thin films of pure and La-modified lead zirconate were processed using A-site vacancy formula Pb(l−1.5x)LaXZrO3 by pulsed excimer laser ablation technique. Pyroelectric coefficient increased gradually from 55 to 190 μC cm−2 K−1 with the addition of 0 to 9 mole% of La to pure lead zirconate. The transition temperature has been reduced to room temperature (∼34 °C) with addition of a 9 mole% of La-to lead zirconate. Presence of antiferroelectricity in pure lead zirconate thin films is due to antiparallel shifts of Pb-ions in (110) direction and reduction of transition temperature is attributed to creation of A-site vacancies would have caused enhancing of ferro-and paraelectric behavior with La-addition.
Keywords :
Antiferroelectric lead zirconate , Micro Raman spectra and pyroelectric measurements , Thin films
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2002
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137859
Link To Document :
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