Simulations of the ripening of 3D, 2D and 1D objects

This paper presents simulations aimed at predicting the kinetic evolution during annealing of nanoparticles and extended defects having different geometry. This versatile model describes the capture and emission of single atoms by clusters. Within this approach, nanoparticles and defects only differ through their formation energies and capture cross-sections. This model has been applied to three particular cases relevant to semiconductor processing (i) spherical Si nanocrystals embedded in a SiO2 matrix; (ii) plate-shaped dislocation loops; and (iii) {311} planar defects in Si. Transmission electron microscopy (TEM) observations have been carried out on each system to measure the evolution of the size-histograms, mean radius and precipitate density during annealing. The simulation results well compared with the experimental data.