Title of article
Two-dimensional organization of As clusters in GaAs
Author/Authors
Chaldyshev، نويسنده , , V.V، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
10
From page
195
To page
204
Abstract
Self-organization of As clusters is discussed in non-stoichiometric GaAs films grown by molecular-beam epitaxy at low temperature. The physical principles and technological tools are described, which can be used to form two-dimensional cluster sheets. The most important limitations are revealed for two-dimensional organization. Artificial superlattices of As-cluster sheets are demonstrated.
Keywords
Low-temperature molecular-beam epitaxy , GaAS , As clusters
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137891
Link To Document