Title of article
Self-organization processes in semiconductor under photo-induced Gunn effect
Author/Authors
Gorley، نويسنده , , P.M and Horley، نويسنده , , P.P and Gonzلlez-Hernلndez، نويسنده , , J and Vorobiev، نويسنده , , Yu.V، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
286
To page
291
Abstract
Theoretical investigation of self-organization of non-equilibrium carriers system in n-GaAs under photo-stimulated Gunn effect was performed. It was shown that the behavior of carrier system could be controlled using incident light intensity resulting in different oscillation regimes. Results obtained allow us to predict application ranges for devices working on the phenomena investigated.
Keywords
n-GaAs , self-organization , Semiconductor , Non-linear System , Gunn effect
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137909
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