Author/Authors :
Baudry، نويسنده , , H and Fellous، نويسنده , , C and Martinet، نويسنده , , B and Romagna، نويسنده , , F and Marty، نويسنده , , M and Mourier، نويسنده , , J and Troillard، نويسنده , , G and Laurens، نويسنده , , M and Monroy، نويسنده , , A and Dutartre، نويسنده , , D and Chantre، نويسنده , , A، نويسنده ,
Abstract :
This paper describes a high performance heterojunction bipolar transistor using a low complexity double polysilicon architecture. Non selective Si/SiGe epitaxy was selected for the base formation, allowing higher manufacturability than for a selective process. Low spread in statistical results confirms very good control and reproducibility of the Si/SiGe stack deposition and epitaxially aligned emitter fabrication. Static and high frequency measurements analysis shows excellent set of electrical parameters: 70-GHz-fT and 90-GHz-fmax have been measured for 2.5 BVCE0 devices.
Keywords :
HBT , Non selective Si/SiGe epitaxy , homogeneity , Device yield , HF measurements
