• Title of article

    Nucleationless island formation in SiGe/Si(100) heteroepitaxy

  • Author/Authors

    Sutter، نويسنده , , P and Lagally، نويسنده , , M.G، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    45
  • To page
    48
  • Abstract
    The formation of faceted three-dimensional (3-D) islands during growth of Si1−xGex alloys on Si(100) has been investigated by low-energy electron microscopy (LEEM). The formation of the islands in this alloy system does not involve 3-D nucleation, but rather proceeds continuously via a precursor array of shallow, stepped mounds on the surface that result from the inherent morphological instability of the strained alloy film.
  • Keywords
    Silicon , Islands , epitaxy , Germanium , Roughening , Quantum dots
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2002
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2137925

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2137925