Title of article
Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures
Author/Authors
Tsamakis، نويسنده , , Ch. Sargentis، نويسنده , , Ch and Apostolopoulos، نويسنده , , G and Boukos، نويسنده , , N، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
221
To page
224
Abstract
Electrical resistivity and Hall measurements have been performed, on strained B-heavily doped Si0.8Ge0.2 epilayers grown by molecular beam epitaxy (MBE) technique, in the temperature range 80–350 K. In-plane Hall mobility and concentration of the free holes were extracted and discussed taking into account the high doping level effects, scattering mechanisms as well as previous drift mobility results.
Keywords
epitaxy , MBE , Strained SiGe , Hall mobility
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137963
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