Author/Authors :
Di Gaspare، نويسنده , , L and Scappucci، نويسنده , , G and Palange، نويسنده , , E and Alfaramawi، نويسنده , , K and Evangelisti، نويسنده , , F and Barucca، نويسنده , , G and Majni، نويسنده , , G، نويسنده ,
Abstract :
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator (SOI) substrates is demonstrated. The structural and electrical properties of the samples are comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2800 cm2 V−1 s−1 at room temperature and 8.2×104 cm2 V−1 s−1 at 4 K are obtained.
