Epitaxial ErSi2−x on strained and relaxed Si1−xGex

We study for the first time the epitaxial growth of ErSi2−x on strained and relaxed Si1−xGex substrates, as well as its structural properties. Epitaxy of ErSi2−x is achieved at a temperature of 550 °C after the reaction of a very thin Er/Si template layer. ErSi2−x grows in the tetragonal phase, which has been previously observed for epitaxial growth on Si at higher temperatures. ErSi2−x layers grown on relaxed Si1−xGex exhibit a higher crystal quality, due to the reduction of the lattice mismatch with increasing Ge content.