Title of article
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
Author/Authors
Prest، نويسنده , , M.J and Palmer، نويسنده , , M.J and Grasby، نويسنده , , T.J and Phillips، نويسنده , , P.J and Mironov، نويسنده , , O.A and Parker، نويسنده , , E.H.C and Whall، نويسنده , , T.E and Waite، نويسنده , , A.M and Evans، نويسنده , , A.G.R and Watling، نويسنده , , J.R. and Asenov، نويسنده , , A and Barker، نويسنده , , J.R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
444
To page
448
Abstract
We briefly review recent work on enhancements in transconductance, maximum voltage gain, carrier mobility and velocity overshoot in Si/Si0.64Ge0.36/Si p-channel metal-oxide-semiconductor devices and then discuss the superior 1/f noise properties in more detail. The results indicate the growth and processing challenges which must be met in order to improve device performance.
Keywords
SiGe , Low frequency noise , Transconductance , MOSFET
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138009
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