Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes

Modification of the surface of GaAs by Ru3+ adsorption leads to a change in Schottky barrier heights of Al/GaAs junctions for both n- and p-type. From our measurements, we have inferred that the surface Fermi level, when compared to the commonly measured pinning position in Al/GaAs structures, is shifted by about 0.1 eV towards the valence band edge.