Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1−x clusters

We present a new gas-aggregation cluster source with two independent crucibles, one for indium and another one for antimony. This source was used to produce mixed InxSb1−x clusters in the nanometer range size (typically 4 nm), which were deposited at room temperature on amorphous carbon or glass substrates by low energy cluster beam deposition technique (LECBD). The film composition was analysed by energy dispersive X-ray (EDX) spectroscopy. The morphology and structure of the films were studied by transmission electron microscopy (conventional and high resolution) and selected area electron diffraction (SAED) at different compositions. Semiconducting InSb clusters could be produced by controlling the temperature of the two crucibles. The electrical properties of the films were studied at a film thickness of 20 nm. The conductivity versus temperature appeared to be thermally activated for all compositions.