Title of article
Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs
Author/Authors
Steinegger، نويسنده , , Th. and Gründig-Wendrock، نويسنده , , B. and Baeumler، نويسنده , , M. and Jurisch، نويسنده , , M. and Jantz، نويسنده , , W. and Niklas، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
29
To page
32
Abstract
Further evidence was found that the 0.8 eV luminescence band in GaAs is correlated to the EL6 defect as identified by photo induced current transient spectroscopy (PICTS). From luminescence topography arguments are put forward that the EL6 defect should not be the dominant recombination centre in GaAs. By the application of microwave detected PICTS it could be shown that the EL6 is definitely not a relevant recombination centre. Recombination takes place most probably via different, partially not jet identified centres.
Keywords
Photoluminescence , Picts , Microwave absorption , SI-Gallium Arsenide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138075
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