Photoluminescence study of {311}defect-precursors in self-implanted silicon

Photoluminescence (PL) study using Ar laser revealed that {311}defect-precursors exist in the samples annealed at either 620 or 670 °C after silicon implantation. The peak energy shift from 0.94 to 0.90 eV is a direct evidence of atomic structural transformation from the smaller precursor interstitial clusters to {311}defects. The atomic structure of the precursor was investigated by using a first principle calculation program. The numerical calculation demonstrated that one of the most plausible structures for the precursors is the di-intersitital.