Random Telegraph Signal: a local probe for single point defect studies in solid-state devices

This paper provides an overview on Random Telegraph Signals (RTSs) in solid-state devices and more in particular in scaled silicon MOSFETs. It tries to answer the following questions: what is an RTS? How does it behave as a function of the operation conditions (temperature, bias)? And what can we learn from it? It will be shown that when properly analysed, RTS is a sensitive local probe for the study of single defects and their microscopic environment. In this way, new insights into trap dynamics and device physics can be gathered which are relevant for submicron and nano-electronic devices.